casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / EMF21T2R
codice articolo del costruttore | EMF21T2R |
---|---|
Numero di parte futuro | FT-EMF21T2R |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
EMF21T2R Stato (ciclo di vita) | Disponibile |
Stato parte | Not For New Designs |
Transistor Type | 1 NPN Pre-Biased, 1 PNP |
Corrente - Collector (Ic) (Max) | 100mA, 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V / 270 @ 10mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | 250MHz, 260MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-563, SOT-666 |
Pacchetto dispositivo fornitore | EMT6 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMF21T2R Peso | Contattaci |
Numero parte di ricambio | EMF21T2R-FT |
RN2904,LF
Toshiba Semiconductor and Storage
RN2905,LF(CT
Toshiba Semiconductor and Storage
RN2906(T5L,F,T)
Toshiba Semiconductor and Storage
RN2907(T5L,F,T)
Toshiba Semiconductor and Storage
RN2908(T5L,F,T)
Toshiba Semiconductor and Storage
RN2909(T5L,F,T)
Toshiba Semiconductor and Storage
RN2910(T5L,F,T)
Toshiba Semiconductor and Storage
RN2911(T5L,F,T)
Toshiba Semiconductor and Storage
RN4901(T5L,F,T)
Toshiba Semiconductor and Storage
RN4901,LF
Toshiba Semiconductor and Storage
XC2VP50-5FF1517C
Xilinx Inc.
XC3S2000-4FGG456C
Xilinx Inc.
APA600-PQ208
Microsemi Corporation
5SGXEB6R2F43C3
Intel
EP2SGX60EF1152C3N
Intel
A1010B-PLG44C
Microsemi Corporation
XC4028EX-2HQ208C
Xilinx Inc.
XC4VFX60-11FFG1152I
Xilinx Inc.
LFE3-95EA-8LFN1156C
Lattice Semiconductor Corporation
LFXP2-40E-6FN484C
Lattice Semiconductor Corporation