casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / EMD5T2R
codice articolo del costruttore | EMD5T2R |
---|---|
Numero di parte futuro | FT-EMD5T2R |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
EMD5T2R Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms, 4.7 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms, 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V / 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | 250MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-563, SOT-666 |
Pacchetto dispositivo fornitore | EMT6 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMD5T2R Peso | Contattaci |
Numero parte di ricambio | EMD5T2R-FT |
RN1910,LF(CT
Toshiba Semiconductor and Storage
RN4985,LF(CT
Toshiba Semiconductor and Storage
RN1902T5LFT
Toshiba Semiconductor and Storage
RN1905(T5L,F,T)
Toshiba Semiconductor and Storage
RN1905,LF
Toshiba Semiconductor and Storage
RN1906(T5L,F,T)
Toshiba Semiconductor and Storage
RN1906,LF
Toshiba Semiconductor and Storage
RN1907,LF
Toshiba Semiconductor and Storage
RN1908(T5L,F,T)
Toshiba Semiconductor and Storage
RN1909(T5L,F,T)
Toshiba Semiconductor and Storage
M7A3P1000-2FG484I
Microsemi Corporation
A3P400-FGG256
Microsemi Corporation
EP2C35F484C8
Intel
EP2AGZ350HF40I3N
Intel
XC2VP30-6FFG1152C
Xilinx Inc.
XC6SLX45T-N3CSG324I
Xilinx Inc.
LFEC6E-3FN256I
Lattice Semiconductor Corporation
LFEC6E-4F256I
Lattice Semiconductor Corporation
LCMXO2280C-4MN132I
Lattice Semiconductor Corporation
10M04DAU324I7G
Intel