casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / DTC114TMT2L
codice articolo del costruttore | DTC114TMT2L |
---|---|
Numero di parte futuro | FT-DTC114TMT2L |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
DTC114TMT2L Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | NPN - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Corrente - Limite del collettore (max) | 500nA (ICBO) |
Frequenza - Transizione | 250MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-723 |
Pacchetto dispositivo fornitore | VMT3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTC114TMT2L Peso | Contattaci |
Numero parte di ricambio | DTC114TMT2L-FT |
RN1108CT(TPL3)
Toshiba Semiconductor and Storage
RN1109ACT(TPL3)
Toshiba Semiconductor and Storage
RN1109CT(TPL3)
Toshiba Semiconductor and Storage
RN1110ACT(TPL3)
Toshiba Semiconductor and Storage
RN1110CT(TPL3)
Toshiba Semiconductor and Storage
RN1111ACT(TPL3)
Toshiba Semiconductor and Storage
RN1111CT(TPL3)
Toshiba Semiconductor and Storage
RN1112ACT(TPL3)
Toshiba Semiconductor and Storage
RN1112CT(TPL3)
Toshiba Semiconductor and Storage
RN1113ACT(TPL3)
Toshiba Semiconductor and Storage
EP20K160ETC144-3N
Intel
LCMXO2280E-4T100C
Lattice Semiconductor Corporation
AX1000-1FG484M
Microsemi Corporation
M2GL010T-1FG484I
Microsemi Corporation
A3PE1500-1PQ208I
Microsemi Corporation
A40MX04-1PL68I
Microsemi Corporation
EP4SGX180KF40I3N
Intel
EP2SGX60EF1152I4N
Intel
LCMXO2-1200HC-4MG132CR1
Lattice Semiconductor Corporation
5SGXMA3H1F35C2N
Intel