casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / DTB743ZMT2L
codice articolo del costruttore | DTB743ZMT2L |
---|---|
Numero di parte futuro | FT-DTB743ZMT2L |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
DTB743ZMT2L Stato (ciclo di vita) | Disponibile |
Stato parte | Not For New Designs |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 200mA |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | 260MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-723 |
Pacchetto dispositivo fornitore | VMT3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTB743ZMT2L Peso | Contattaci |
Numero parte di ricambio | DTB743ZMT2L-FT |
RN2108ACT(TPL3)
Toshiba Semiconductor and Storage
RN2108CT(TPL3)
Toshiba Semiconductor and Storage
RN2109ACT(TPL3)
Toshiba Semiconductor and Storage
RN2109CT(TPL3)
Toshiba Semiconductor and Storage
RN2110CT(TPL3)
Toshiba Semiconductor and Storage
RN2111CT(TPL3)
Toshiba Semiconductor and Storage
RN2112CT(TPL3)
Toshiba Semiconductor and Storage
RN2113CT(TPL3)
Toshiba Semiconductor and Storage
DTC143ZMT2L
Rohm Semiconductor
DTC123JMT2L
Rohm Semiconductor
AGLN010V5-UCG36
Microsemi Corporation
LFE2M100E-6F1152C
Lattice Semiconductor Corporation
AGL060V5-VQG100
Microsemi Corporation
10M25DCF484I7G
Intel
5SGXEB6R2F40C3
Intel
5SGXMA7H2F35C2LN
Intel
EP3SL150F1152C2
Intel
A1020B-PL44I
Microsemi Corporation
XC4VLX160-11FF1148C
Xilinx Inc.
EPF8452AQC160-3AC
Intel