casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / DTB743XMT2L
codice articolo del costruttore | DTB743XMT2L |
---|---|
Numero di parte futuro | FT-DTB743XMT2L |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
DTB743XMT2L Stato (ciclo di vita) | Disponibile |
Stato parte | Not For New Designs |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 200mA |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | 260MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-723 |
Pacchetto dispositivo fornitore | VMT3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTB743XMT2L Peso | Contattaci |
Numero parte di ricambio | DTB743XMT2L-FT |
RN2107CT(TPL3)
Toshiba Semiconductor and Storage
RN2108ACT(TPL3)
Toshiba Semiconductor and Storage
RN2108CT(TPL3)
Toshiba Semiconductor and Storage
RN2109ACT(TPL3)
Toshiba Semiconductor and Storage
RN2109CT(TPL3)
Toshiba Semiconductor and Storage
RN2110CT(TPL3)
Toshiba Semiconductor and Storage
RN2111CT(TPL3)
Toshiba Semiconductor and Storage
RN2112CT(TPL3)
Toshiba Semiconductor and Storage
RN2113CT(TPL3)
Toshiba Semiconductor and Storage
DTC143ZMT2L
Rohm Semiconductor
LFXP3E-5T100C
Lattice Semiconductor Corporation
XC3S500E-4FG320I
Xilinx Inc.
XA3S1200E-4FTG256Q
Xilinx Inc.
XCVU065-1FFVC1517I
Xilinx Inc.
A3PE600-2FGG484
Microsemi Corporation
LFE5UM5G-45F-8BG381C
Lattice Semiconductor Corporation
EP1S20B672C6
Intel
5SGXEA9N2F45I2L
Intel
A40MX04-1PLG84I
Microsemi Corporation
LFXP2-17E-5FT256C
Lattice Semiconductor Corporation