casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / DTB513ZMT2L
codice articolo del costruttore | DTB513ZMT2L |
---|---|
Numero di parte futuro | FT-DTB513ZMT2L |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
DTB513ZMT2L Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | 260MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-723 |
Pacchetto dispositivo fornitore | VMT3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTB513ZMT2L Peso | Contattaci |
Numero parte di ricambio | DTB513ZMT2L-FT |
RN2106ACT(TPL3)
Toshiba Semiconductor and Storage
RN2110ACT(TPL3)
Toshiba Semiconductor and Storage
RN2111ACT(TPL3)
Toshiba Semiconductor and Storage
RN2112ACT(TPL3)
Toshiba Semiconductor and Storage
RN2113ACT(TPL3)
Toshiba Semiconductor and Storage
RN1101ACT(TPL3)
Toshiba Semiconductor and Storage
RN1101CT(TPL3)
Toshiba Semiconductor and Storage
RN1102ACT(TPL3)
Toshiba Semiconductor and Storage
RN1102CT(TPL3)
Toshiba Semiconductor and Storage
RN1103ACT(TPL3)
Toshiba Semiconductor and Storage
EP20K60ETC144-3
Intel
XC2S50-5PQG208I
Xilinx Inc.
XC4020XL-3PQ208C
Xilinx Inc.
A1415A-1VQG100M
Microsemi Corporation
EP3C10F256A7N
Intel
5SGXEA5K2F40I2LN
Intel
5SEE9H40C2LN
Intel
A42MX16-PQ100A
Microsemi Corporation
LFXP3E-4QN208C
Lattice Semiconductor Corporation
10AX090U2F45E1SG
Intel