casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / DTA143ZMT2L
codice articolo del costruttore | DTA143ZMT2L |
---|---|
Numero di parte futuro | FT-DTA143ZMT2L |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
DTA143ZMT2L Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | 250MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-723 |
Pacchetto dispositivo fornitore | VMT3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTA143ZMT2L Peso | Contattaci |
Numero parte di ricambio | DTA143ZMT2L-FT |
RN1117(T5L,F,T)
Toshiba Semiconductor and Storage
RN1118(T5L,F,T)
Toshiba Semiconductor and Storage
RN2103(T5L,F,T)
Toshiba Semiconductor and Storage
RN2104(T5L,F,T)
Toshiba Semiconductor and Storage
RN2106(T5L,F,T)
Toshiba Semiconductor and Storage
RN2108(T5L,F,T)
Toshiba Semiconductor and Storage
RN2117(T5L,F,T)
Toshiba Semiconductor and Storage
RN2118(T5L,F,T)
Toshiba Semiconductor and Storage
RN1301,LF
Toshiba Semiconductor and Storage
RN2315TE85LF
Toshiba Semiconductor and Storage
XCV300E-7FG456C
Xilinx Inc.
A3P600-2FGG484
Microsemi Corporation
EP4CGX50CF23C8
Intel
5SGSMD4E1H29C1N
Intel
10CL006YE144I7G
Intel
5SGXMA7N3F45I3N
Intel
A1020B-2PLG44C
Microsemi Corporation
LFE2-50SE-6F484C
Lattice Semiconductor Corporation
LCMXO2-2000ZE-3BG256C
Lattice Semiconductor Corporation
LCMXO2-1200HC-5MG132I
Lattice Semiconductor Corporation