casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / DTA143XMFHAT2L
codice articolo del costruttore | DTA143XMFHAT2L |
---|---|
Numero di parte futuro | FT-DTA143XMFHAT2L |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | Automotive, AEC-Q101 |
DTA143XMFHAT2L Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | - |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Corrente - Limite del collettore (max) | - |
Frequenza - Transizione | 250MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-723 |
Pacchetto dispositivo fornitore | VMT3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTA143XMFHAT2L Peso | Contattaci |
Numero parte di ricambio | DTA143XMFHAT2L-FT |
RN2311(TE85L,F)
Toshiba Semiconductor and Storage
RN2313(TE85L,F)
Toshiba Semiconductor and Storage
RN2103ACT(TPL3)
Toshiba Semiconductor and Storage
RN2105ACT(TPL3)
Toshiba Semiconductor and Storage
RN2106ACT(TPL3)
Toshiba Semiconductor and Storage
RN2110ACT(TPL3)
Toshiba Semiconductor and Storage
RN2111ACT(TPL3)
Toshiba Semiconductor and Storage
RN2112ACT(TPL3)
Toshiba Semiconductor and Storage
RN2113ACT(TPL3)
Toshiba Semiconductor and Storage
RN1101ACT(TPL3)
Toshiba Semiconductor and Storage
XC7A12T-L1CSG325I
Xilinx Inc.
AX250-1FG256M
Microsemi Corporation
M1A3P1000-FG256I
Microsemi Corporation
EP2S60F672C4N
Intel
EP4SE820H40C3N
Intel
XC6VLX75T-L1FF784I
Xilinx Inc.
A40MX02-2PQ100I
Microsemi Corporation
LFE3-95EA-6LFN1156I
Lattice Semiconductor Corporation
5CGXFC4C6F23I7N
Intel
10AX016E4F29I3SG
Intel