casa / prodotti / Prodotti semiconduttori discreti / Diodi - Zener - Single / BZD27C62P-M3-08
codice articolo del costruttore | BZD27C62P-M3-08 |
---|---|
Numero di parte futuro | FT-BZD27C62P-M3-08 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | Automotive, AEC-Q101, BZD27C-M |
BZD27C62P-M3-08 Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Voltage - Zener (Nom) (Vz) | 62V |
Tolleranza | - |
Potenza - Max | 800mW |
Impedenza (Max) (Zzt) | 80 Ohms |
Corrente - Perdita inversa @ Vr | 1µA @ 47V |
Voltage - Forward (Vf) (Max) @ If | 1.2V @ 200mA |
temperatura di esercizio | -65°C ~ 175°C |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | DO-219AB |
Pacchetto dispositivo fornitore | DO-219AB (SMF) |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27C62P-M3-08 Peso | Contattaci |
Numero parte di ricambio | BZD27C62P-M3-08-FT |
BZD27C18P-M3-08
Vishay Semiconductor Diodes Division
BZD27C18P-M3-18
Vishay Semiconductor Diodes Division
BZD27C200P-E3-18
Vishay Semiconductor Diodes Division
BZD27C200P-HE3-08
Vishay Semiconductor Diodes Division
BZD27C200P-HE3-18
Vishay Semiconductor Diodes Division
BZD27C200P-M3-08
Vishay Semiconductor Diodes Division
BZD27C200P-M3-18
Vishay Semiconductor Diodes Division
BZD27C20P-E3-18
Vishay Semiconductor Diodes Division
BZD27C20P-HE3-08
Vishay Semiconductor Diodes Division
BZD27C20P-HE3-18
Vishay Semiconductor Diodes Division
LCMXO2-256ZE-1TG100C
Lattice Semiconductor Corporation
LCMXO2-2000HC-5TG100C
Lattice Semiconductor Corporation
XC4036XL-3HQ304I
Xilinx Inc.
XC7S100-L1FGGA484I
Xilinx Inc.
M1A3P600-2FG484I
Microsemi Corporation
M2GL025-1VFG400
Microsemi Corporation
XA6SLX16-3CSG225Q
Xilinx Inc.
AGLP125V2-CSG289I
Microsemi Corporation
LFE2-20SE-5F484I
Lattice Semiconductor Corporation
5SGSMD4H1F35I2N
Intel