casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / BCR185WE6327BTSA1
codice articolo del costruttore | BCR185WE6327BTSA1 |
---|---|
Numero di parte futuro | FT-BCR185WE6327BTSA1 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
BCR185WE6327BTSA1 Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
Frequenza - Transizione | 200MHz |
Potenza - Max | 250mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SC-70, SOT-323 |
Pacchetto dispositivo fornitore | PG-SOT323-3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
BCR185WE6327BTSA1 Peso | Contattaci |
Numero parte di ricambio | BCR185WE6327BTSA1-FT |
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