casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single / 2SC2235-Y,USNHF(M
codice articolo del costruttore | 2SC2235-Y,USNHF(M |
---|---|
Numero di parte futuro | FT-2SC2235-Y,USNHF(M |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
2SC2235-Y,USNHF(M Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | NPN |
Corrente - Collector (Ic) (Max) | 800mA |
Voltage - Collector Emitter Breakdown (Max) | 120V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 5V |
Potenza - Max | 900mW |
Frequenza - Transizione | 120MHz |
temperatura di esercizio | 150°C (TJ) |
Tipo di montaggio | Through Hole |
Pacchetto / caso | TO-226-3, TO-92-3 Long Body |
Pacchetto dispositivo fornitore | TO-92MOD |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SC2235-Y,USNHF(M Peso | Contattaci |
Numero parte di ricambio | 2SC2235-Y,USNHF(M-FT |
2SA1020-Y(ND1,AF)
Toshiba Semiconductor and Storage
2SA1020-Y(T6CANOAF
Toshiba Semiconductor and Storage
2SA1020-Y(T6CANOFM
Toshiba Semiconductor and Storage
2SA1020-Y(T6CN,A,F
Toshiba Semiconductor and Storage
2SA1020-Y(T6FJT,AF
Toshiba Semiconductor and Storage
2SA1020-Y(T6ND1,AF
Toshiba Semiconductor and Storage
2SA1020-Y(T6ND3,AF
Toshiba Semiconductor and Storage
2SA1020-Y(T6OMI,FM
Toshiba Semiconductor and Storage
2SA1020-Y(T6TOJ,FM
Toshiba Semiconductor and Storage
2SA1020-Y(T6TR,A,F
Toshiba Semiconductor and Storage
XC2S50-6TQ144C
Xilinx Inc.
LCMXO2-7000ZE-2TG144I
Lattice Semiconductor Corporation
A54SX72A-FGG256A
Microsemi Corporation
M1A3P600-1FG256I
Microsemi Corporation
A40MX02-3PLG68
Microsemi Corporation
XC4013XL-1HT176I
Xilinx Inc.
EP3CLS100U484I7N
Intel
5SGXEA7K3F40C2
Intel
XC6VLX195T-2FFG784C
Xilinx Inc.
LCMXO2-4000ZE-2BG332I
Lattice Semiconductor Corporation