casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array / VT6T11T2R
codice articolo del costruttore | VT6T11T2R |
---|---|
Numero di parte futuro | FT-VT6T11T2R |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
VT6T11T2R Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | 2 PNP (Dual) |
Corrente - Collector (Ic) (Max) | 200mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 2V |
Potenza - Max | 150mW |
Frequenza - Transizione | 350MHz |
temperatura di esercizio | 150°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 6-SMD, Flat Leads |
Pacchetto dispositivo fornitore | VMT6 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
VT6T11T2R Peso | Contattaci |
Numero parte di ricambio | VT6T11T2R-FT |
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