casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / UNR511HG0L
codice articolo del costruttore | UNR511HG0L |
---|---|
Numero di parte futuro | FT-UNR511HG0L |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
UNR511HG0L Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | 80MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SC-85 |
Pacchetto dispositivo fornitore | SMini3-F2 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
UNR511HG0L Peso | Contattaci |
Numero parte di ricambio | UNR511HG0L-FT |
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