casa / prodotti / Prodotti semiconduttori discreti / Transistor - FET, MOSFET - Array / STS5DNF60L
codice articolo del costruttore | STS5DNF60L |
---|---|
Numero di parte futuro | FT-STS5DNF60L |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | Automotive, AEC-Q101, STripFET™ II |
STS5DNF60L Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Tipo FET | 2 N-Channel (Dual) |
Caratteristica FET | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Corrente - Scarico continuo (Id) @ 25 ° C | 5A |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 2A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
Capacità di ingresso (Ciss) (Max) @ Vds | 1030pF @ 25V |
Potenza - Max | 2W |
temperatura di esercizio | -55°C ~ 150°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 8-SOIC (0.154", 3.90mm Width) |
Pacchetto dispositivo fornitore | 8-SO |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
STS5DNF60L Peso | Contattaci |
Numero parte di ricambio | STS5DNF60L-FT |
SSM6L61NU,LF
Toshiba Semiconductor and Storage
SSM6N67NU,LF
Toshiba Semiconductor and Storage
SSM6P47NU,LF
Toshiba Semiconductor and Storage
SSM6P49NU,LF
Toshiba Semiconductor and Storage
SSM6N55NU,LF
Toshiba Semiconductor and Storage
SSM6N58NU,LF
Toshiba Semiconductor and Storage
TPC8221-H,LQ(S
Toshiba Semiconductor and Storage
TPC8223-H,LQ(S
Toshiba Semiconductor and Storage
TPC8407,LQ(S
Toshiba Semiconductor and Storage
TPC8408,LQ(S
Toshiba Semiconductor and Storage
XC7S100-1FGGA676I
Xilinx Inc.
XC2V1500-5FGG676C
Xilinx Inc.
M1A3P400-1PQ208I
Microsemi Corporation
LCMXO640C-3FTN256C
Lattice Semiconductor Corporation
LCMXO2-4000HC-6QN84I
Lattice Semiconductor Corporation
A3P030-1VQ100I
Microsemi Corporation
EP3CLS200F484C8ES
Intel
5SGXMB6R2F40I3N
Intel
XC5VLX110-3FFG676C
Xilinx Inc.
A54SX16A-TQ100I
Microsemi Corporation