casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / SMUN5131DW1T1G
codice articolo del costruttore | SMUN5131DW1T1G |
---|---|
Numero di parte futuro | FT-SMUN5131DW1T1G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
SMUN5131DW1T1G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 250mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 6-TSSOP, SC-88, SOT-363 |
Pacchetto dispositivo fornitore | SC-88/SC70-6/SOT-363 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
SMUN5131DW1T1G Peso | Contattaci |
Numero parte di ricambio | SMUN5131DW1T1G-FT |
NSBC113EPDXV6T1G
ON Semiconductor
NSVBC143ZPDXV6T1G
ON Semiconductor
EMF5XV6T5G
ON Semiconductor
NSVBC143TPDXV6T1G
ON Semiconductor
NSVBC114EDXV6T1G
ON Semiconductor
NSBC114YPDXV6T5G
ON Semiconductor
NSBC123JPDXV6T5G
ON Semiconductor
NSBC144EDXV6T5G
ON Semiconductor
NSVBC114YDXV6T1G
ON Semiconductor
NSVBC124EDXV6T1G
ON Semiconductor
XC7A35T-2FGG484C
Xilinx Inc.
LIF-MD6000-6KMG80I
Lattice Semiconductor Corporation
EP20K600EFC672-3
Intel
10M50DCF256I6G
Intel
5SGSMD4K2F40I2L
Intel
5SGXMA5N2F45I3N
Intel
XC2V8000-5FFG1152C
Xilinx Inc.
LFE2M50E-5F484C
Lattice Semiconductor Corporation
EPF10K100ARC240-1N
Intel
EP2OK60EQI208-2X
Intel