casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / SMMUN2116LT3G
codice articolo del costruttore | SMMUN2116LT3G |
---|---|
Numero di parte futuro | FT-SMMUN2116LT3G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
SMMUN2116LT3G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 246mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | TO-236-3, SC-59, SOT-23-3 |
Pacchetto dispositivo fornitore | SOT-23-3 (TO-236) |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
SMMUN2116LT3G Peso | Contattaci |
Numero parte di ricambio | SMMUN2116LT3G-FT |
SMMUN2211LT3G
ON Semiconductor
MMUN2233LT1G
ON Semiconductor
MUN2235T1G
ON Semiconductor
NSVMMUN2131LT1G
ON Semiconductor
MMUN2211LT1G
ON Semiconductor
NSVMUN2237T1G
ON Semiconductor
MMUN2136LT1G
ON Semiconductor
MMUN2111LT3G
ON Semiconductor
NSVMMUN2230LT1G
ON Semiconductor
SMMUN2234LT1G
ON Semiconductor
EX64-TQG64I
Microsemi Corporation
XCVU080-2FFVD1517I
Xilinx Inc.
A3PN030-Z2QNG48
Microsemi Corporation
A42MX36-1CQ256M
Microsemi Corporation
A3PN060-1VQ100I
Microsemi Corporation
EP3SE50F484C4L
Intel
5SGXMB5R2F43C2LN
Intel
XCV50-5BG256I
Xilinx Inc.
APA150-TQ100
Microsemi Corporation
5AGXFA7H4F35C4N
Intel