casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / SMMUN2116LT3G
codice articolo del costruttore | SMMUN2116LT3G |
---|---|
Numero di parte futuro | FT-SMMUN2116LT3G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
SMMUN2116LT3G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 246mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | TO-236-3, SC-59, SOT-23-3 |
Pacchetto dispositivo fornitore | SOT-23-3 (TO-236) |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
SMMUN2116LT3G Peso | Contattaci |
Numero parte di ricambio | SMMUN2116LT3G-FT |
SMMUN2211LT3G
ON Semiconductor
MMUN2233LT1G
ON Semiconductor
MUN2235T1G
ON Semiconductor
NSVMMUN2131LT1G
ON Semiconductor
MMUN2211LT1G
ON Semiconductor
NSVMUN2237T1G
ON Semiconductor
MMUN2136LT1G
ON Semiconductor
MMUN2111LT3G
ON Semiconductor
NSVMMUN2230LT1G
ON Semiconductor
SMMUN2234LT1G
ON Semiconductor
XC3SD1800A-4FGG676C
Xilinx Inc.
XC2VP7-5FG456I
Xilinx Inc.
M2GL090S-1FGG484I
Microsemi Corporation
LFE5UM5G-85F-8BG554I
Lattice Semiconductor Corporation
EP1S20F672C6
Intel
5SGSED6N2F45C2LN
Intel
XC7VX415T-3FFG1158E
Xilinx Inc.
LFE3-70EA-8FN672I
Lattice Semiconductor Corporation
EP4CGX150DF31C7N
Intel
EPF10K50SQC240-1
Intel