casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / SMMUN2111LT3G
codice articolo del costruttore | SMMUN2111LT3G |
---|---|
Numero di parte futuro | FT-SMMUN2111LT3G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
SMMUN2111LT3G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 246mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | TO-236-3, SC-59, SOT-23-3 |
Pacchetto dispositivo fornitore | SOT-23-3 (TO-236) |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
SMMUN2111LT3G Peso | Contattaci |
Numero parte di ricambio | SMMUN2111LT3G-FT |
SMUN2216T1G
ON Semiconductor
SMMUN2211LT3G
ON Semiconductor
MMUN2233LT1G
ON Semiconductor
MUN2235T1G
ON Semiconductor
NSVMMUN2131LT1G
ON Semiconductor
MMUN2211LT1G
ON Semiconductor
NSVMUN2237T1G
ON Semiconductor
MMUN2136LT1G
ON Semiconductor
MMUN2111LT3G
ON Semiconductor
NSVMMUN2230LT1G
ON Semiconductor
XC6SLX4-L1TQG144I
Xilinx Inc.
XC2S30-5VQ100I
Xilinx Inc.
XC6SLX25-N3FGG484I
Xilinx Inc.
APA600-FG484
Microsemi Corporation
APA450-FG256
Microsemi Corporation
EP20K30EFC144-3
Intel
5AGZME1E3H29I4N
Intel
XA6SLX9-2CSG225Q
Xilinx Inc.
LFE3-35EA-7FN672C
Lattice Semiconductor Corporation
EP1S80F1020I7N
Intel