casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / PDTC114YM,315
codice articolo del costruttore | PDTC114YM,315 |
---|---|
Numero di parte futuro | FT-PDTC114YM,315 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
PDTC114YM,315 Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | NPN - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
Corrente - Limite del collettore (max) | 1µA |
Frequenza - Transizione | - |
Potenza - Max | 250mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SC-101, SOT-883 |
Pacchetto dispositivo fornitore | DFN1006-3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
PDTC114YM,315 Peso | Contattaci |
Numero parte di ricambio | PDTC114YM,315-FT |
DTC115EET1G
ON Semiconductor
DTA143EET1G
ON Semiconductor
DTA144WET1G
ON Semiconductor
NSVDTA144EET1G
ON Semiconductor
NSVDTC123JET1G
ON Semiconductor
NSVDTC144WET1G
ON Semiconductor
SDTC144EET1G
ON Semiconductor
DTA124XET1G
ON Semiconductor
DTC123EET1G
ON Semiconductor
DTC123TET1G
ON Semiconductor
AGLN020V2-CSG81I
Microsemi Corporation
A54SX32A-1FGG256
Microsemi Corporation
LFE5UM-85F-7BG554I
Lattice Semiconductor Corporation
EP1K100FC256-2N
Intel
5SGXMBBR3H43I3LN
Intel
5SGXEA5H2F35I3L
Intel
XA7A50T-1CPG236Q
Xilinx Inc.
LFXP2-17E-5FTN256I
Lattice Semiconductor Corporation
LFEC3E-4QN208I
Lattice Semiconductor Corporation
EP2SGX30DF780C5
Intel