casa / prodotti / Prodotti semiconduttori discreti / Transistor - FET, MOSFET - Array / NTMFD4C87NT1G
codice articolo del costruttore | NTMFD4C87NT1G |
---|---|
Numero di parte futuro | FT-NTMFD4C87NT1G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
NTMFD4C87NT1G Stato (ciclo di vita) | Disponibile |
Stato parte | Last Time Buy |
Tipo FET | 2 N-Channel (Dual) Asymmetrical |
Caratteristica FET | Standard |
Drain to Source Voltage (Vdss) | 30V |
Corrente - Scarico continuo (Id) @ 25 ° C | 11.7A, 14.9A |
Rds On (Max) @ Id, Vgs | 5.4 mOhm @ 30A, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22.2nC @ 10V |
Capacità di ingresso (Ciss) (Max) @ Vds | 1252pF @ 15V |
Potenza - Max | 1.1W |
temperatura di esercizio | -55°C ~ 150°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 8-PowerTDFN |
Pacchetto dispositivo fornitore | 8-DFN (5x6) |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
NTMFD4C87NT1G Peso | Contattaci |
Numero parte di ricambio | NTMFD4C87NT1G-FT |
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