casa / prodotti / Prodotti semiconduttori discreti / Transistor - FET, MOSFET - Array / NTLJD4116NT1G
codice articolo del costruttore | NTLJD4116NT1G |
---|---|
Numero di parte futuro | FT-NTLJD4116NT1G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
NTLJD4116NT1G Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Tipo FET | 2 N-Channel (Dual) |
Caratteristica FET | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Corrente - Scarico continuo (Id) @ 25 ° C | 2.5A |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 2A, 4.5V |
Vgs (th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 4.5V |
Capacità di ingresso (Ciss) (Max) @ Vds | 427pF @ 15V |
Potenza - Max | 710mW |
temperatura di esercizio | -55°C ~ 150°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 6-WDFN Exposed Pad |
Pacchetto dispositivo fornitore | 6-WDFN (2x2) |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
NTLJD4116NT1G Peso | Contattaci |
Numero parte di ricambio | NTLJD4116NT1G-FT |
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