casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / NSVTB60BDW1T1G
codice articolo del costruttore | NSVTB60BDW1T1G |
---|---|
Numero di parte futuro | FT-NSVTB60BDW1T1G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | Automotive, AEC-Q101 |
NSVTB60BDW1T1G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | 1 NPN Pre-Biased, 1 PNP |
Corrente - Collector (Ic) (Max) | 150mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 120 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 250mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 6-TSSOP, SC-88, SOT-363 |
Pacchetto dispositivo fornitore | SC-88/SC70-6/SOT-363 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSVTB60BDW1T1G Peso | Contattaci |
Numero parte di ricambio | NSVTB60BDW1T1G-FT |
NSVBC143ZPDXV6T1G
ON Semiconductor
EMF5XV6T5G
ON Semiconductor
NSVBC143TPDXV6T1G
ON Semiconductor
NSVBC114EDXV6T1G
ON Semiconductor
NSBC114YPDXV6T5G
ON Semiconductor
NSBC123JPDXV6T5G
ON Semiconductor
NSBC144EDXV6T5G
ON Semiconductor
NSVBC114YDXV6T1G
ON Semiconductor
NSVBC124EDXV6T1G
ON Semiconductor
NSBA114YDXV6T1G
ON Semiconductor
XC2V250-5FGG256I
Xilinx Inc.
XC6SLX150T-3FGG900C
Xilinx Inc.
ICE65L01F-LQN84C
Lattice Semiconductor Corporation
A3PN250-VQG100I
Microsemi Corporation
EP4CE30F23C7
Intel
5SGSED8K3F40C4N
Intel
5CGXFC5F6M11I7N
Intel
5SGXMA3K2F35I3LN
Intel
10AX016E4F29E3SG
Intel
EP1K30QC208-1N
Intel