casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / NSVDTA114YM3T5G
codice articolo del costruttore | NSVDTA114YM3T5G |
---|---|
Numero di parte futuro | FT-NSVDTA114YM3T5G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | Automotive, AEC-Q101 |
NSVDTA114YM3T5G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
Frequenza - Transizione | - |
Potenza - Max | 260mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-723 |
Pacchetto dispositivo fornitore | SOT-723 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSVDTA114YM3T5G Peso | Contattaci |
Numero parte di ricambio | NSVDTA114YM3T5G-FT |
MUN5237T1G
ON Semiconductor
MUN5238T1G
ON Semiconductor
MUN5240T1G
ON Semiconductor
MUN5241T1G
ON Semiconductor
SMUN5111T1G
ON Semiconductor
SMUN5114T3G
ON Semiconductor
SMUN5214T1G
ON Semiconductor
SMUN5215T1G
ON Semiconductor
SMUN5232T1G
ON Semiconductor
MUN5113T1
ON Semiconductor
LCMXO2-1200HC-4TG144C
Lattice Semiconductor Corporation
LCMXO256C-5T100C
Lattice Semiconductor Corporation
AX500-FGG484
Microsemi Corporation
APA750-PQG208A
Microsemi Corporation
M2GL005S-1VFG400I
Microsemi Corporation
M1AGL250V2-VQG100I
Microsemi Corporation
AT40K10-2DQC
Microchip Technology
EP1S20B672C6
Intel
XC5VLX110-1FFG1760CES
Xilinx Inc.
10AX066K2F40I2LG
Intel