casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / NSBC143ZPDXV6T5G
codice articolo del costruttore | NSBC143ZPDXV6T5G |
---|---|
Numero di parte futuro | FT-NSBC143ZPDXV6T5G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
NSBC143ZPDXV6T5G Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 500mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-563, SOT-666 |
Pacchetto dispositivo fornitore | SOT-563 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSBC143ZPDXV6T5G Peso | Contattaci |
Numero parte di ricambio | NSBC143ZPDXV6T5G-FT |
NSBC124EPDXV6T1G
ON Semiconductor
NSVBC123JPDXV6T1G
ON Semiconductor
NSBC124EPDXV6T5G
ON Semiconductor
NSBC144EPDXV6T5G
ON Semiconductor
NSVBC143ZPDXV6T5G
ON Semiconductor
NSVB143ZPDXV6T1G
ON Semiconductor
NSVBC114EPDXV6T1G
ON Semiconductor
EMD5DXV6T5G
ON Semiconductor
NSBC114EPDXV6T5G
ON Semiconductor
EMD4DXV6T5G
ON Semiconductor
XC6SLX150-N3FG900I
Xilinx Inc.
A3P1000-FGG256T
Microsemi Corporation
A54SX08A-PQ208A
Microsemi Corporation
MPF300T-1FCG1152E
Microsemi Corporation
M2GL010T-1VFG400
Microsemi Corporation
EP2C35F672I8N
Intel
EP2C70F672C6
Intel
EPF10K200SBC600-1X
Intel
XC7VX485T-2FFG1761C
Xilinx Inc.
XA6SLX25-3CSG324Q
Xilinx Inc.