casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / NSBC123JF3T5G
codice articolo del costruttore | NSBC123JF3T5G |
---|---|
Numero di parte futuro | FT-NSBC123JF3T5G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
NSBC123JF3T5G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | NPN - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 254mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-1123 |
Pacchetto dispositivo fornitore | SOT-1123 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSBC123JF3T5G Peso | Contattaci |
Numero parte di ricambio | NSBC123JF3T5G-FT |
MUN2214T1G
ON Semiconductor
MUN2233T1G
ON Semiconductor
MUN2113T1G
ON Semiconductor
SMMUN2111LT1G
ON Semiconductor
SMMUN2233LT1G
ON Semiconductor
SMUN2212T1G
ON Semiconductor
MMUN2212LT1G
ON Semiconductor
MMUN2240LT1G
ON Semiconductor
NSVMMUN2133LT1G
ON Semiconductor
NSVMMUN2232LT1G
ON Semiconductor
XC7A50T-2FTG256C
Xilinx Inc.
A3P250-VQ100I
Microsemi Corporation
EPF10K50VFC484-2
Intel
5SGXMA7N2F40C2N
Intel
EP4SE360H29C4N
Intel
LCMXO2-7000HE-4BG256C
Lattice Semiconductor Corporation
LFE3-150EA-6FN672CTW
Lattice Semiconductor Corporation
EP2AGX260FF35C6NES
Intel
5SGXEA3H3F35C2LN
Intel
EP1SGX25FF1020C5N
Intel