casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / MUN2130T1
codice articolo del costruttore | MUN2130T1 |
---|---|
Numero di parte futuro | FT-MUN2130T1 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
MUN2130T1 Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 230mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | TO-236-3, SC-59, SOT-23-3 |
Pacchetto dispositivo fornitore | SC-59 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN2130T1 Peso | Contattaci |
Numero parte di ricambio | MUN2130T1-FT |
NSVMMUN2217LT1G
ON Semiconductor
MUN2214T3G
ON Semiconductor
SMMUN2116LT1G
ON Semiconductor
SMMUN2215LT1G
ON Semiconductor
MMUN2131LT1G
ON Semiconductor
MUN2130T1G
ON Semiconductor
MUN2136T1G
ON Semiconductor
MUN2230T1G
ON Semiconductor
MMUN2130LT1G
ON Semiconductor
NSVMMUN2232LT3G
ON Semiconductor
LCMXO2-7000HE-4TG144I
Lattice Semiconductor Corporation
EPF10K30ATC144-1N
Intel
5CGXFC4C6F27I7N
Intel
EP3SE260F1517C2
Intel
EP2AGX65DF25C6N
Intel
5SGXMB5R3F43C2N
Intel
5SGXMA5K3F35C2LN
Intel
XC6VLX240T-1FFG1156I
Xilinx Inc.
A42MX24-1PLG84
Microsemi Corporation
LCMXO640E-4M100C
Lattice Semiconductor Corporation