casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / MUN2130T1
codice articolo del costruttore | MUN2130T1 |
---|---|
Numero di parte futuro | FT-MUN2130T1 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
MUN2130T1 Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 230mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | TO-236-3, SC-59, SOT-23-3 |
Pacchetto dispositivo fornitore | SC-59 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN2130T1 Peso | Contattaci |
Numero parte di ricambio | MUN2130T1-FT |
NSVMMUN2217LT1G
ON Semiconductor
MUN2214T3G
ON Semiconductor
SMMUN2116LT1G
ON Semiconductor
SMMUN2215LT1G
ON Semiconductor
MMUN2131LT1G
ON Semiconductor
MUN2130T1G
ON Semiconductor
MUN2136T1G
ON Semiconductor
MUN2230T1G
ON Semiconductor
MMUN2130LT1G
ON Semiconductor
NSVMMUN2232LT3G
ON Semiconductor
LCMXO640E-4TN144C
Lattice Semiconductor Corporation
XC3S50A-4VQG100I
Xilinx Inc.
XC3S50-4VQ100I
Xilinx Inc.
APA1000-BGG456I
Microsemi Corporation
M7AFS600-1FG256
Microsemi Corporation
EP4SGX230KF40C2N
Intel
5SGSMD5H1F35C2LN
Intel
XC4036XL-2HQ208C
Xilinx Inc.
EP4SGX230DF29I3
Intel
10CX085YF672I5G
Intel