casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single / JAN2N2432
codice articolo del costruttore | JAN2N2432 |
---|---|
Numero di parte futuro | FT-JAN2N2432 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | Military, MIL-PRF-19500/313 |
JAN2N2432 Stato (ciclo di vita) | Disponibile |
Stato parte | Discontinued at Future Semiconductor |
Transistor Type | NPN |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Corrente - Limite del collettore (max) | 10nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1mA, 5V |
Potenza - Max | 360mW |
Frequenza - Transizione | - |
temperatura di esercizio | -65°C ~ 175°C (TJ) |
Tipo di montaggio | Through Hole |
Pacchetto / caso | TO-206AA, TO-18-3 Metal Can |
Pacchetto dispositivo fornitore | TO-18 (TO-206AA) |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N2432 Peso | Contattaci |
Numero parte di ricambio | JAN2N2432-FT |
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