casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / IMH21T110
codice articolo del costruttore | IMH21T110 |
---|---|
Numero di parte futuro | FT-IMH21T110 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
IMH21T110 Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 820 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 2.5mA, 50mA |
Corrente - Limite del collettore (max) | 500nA (ICBO) |
Frequenza - Transizione | 150MHz |
Potenza - Max | 300mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SC-74, SOT-457 |
Pacchetto dispositivo fornitore | SMT6 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
IMH21T110 Peso | Contattaci |
Numero parte di ricambio | IMH21T110-FT |
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