codice articolo del costruttore | EMT3T2R |
---|---|
Numero di parte futuro | FT-EMT3T2R |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
EMT3T2R Stato (ciclo di vita) | Disponibile |
Stato parte | Not For New Designs |
Transistor Type | 2 PNP (Dual) |
Corrente - Collector (Ic) (Max) | 150mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
Potenza - Max | 150mW |
Frequenza - Transizione | 140MHz |
temperatura di esercizio | 150°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-563, SOT-666 |
Pacchetto dispositivo fornitore | EMT6 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMT3T2R Peso | Contattaci |
Numero parte di ricambio | EMT3T2R-FT |
HN1A01FU-GR,LF
Toshiba Semiconductor and Storage
HN1A01FU-Y,LF
Toshiba Semiconductor and Storage
HN1B01FU-GR,LF
Toshiba Semiconductor and Storage
HN1C01FU-GR,LF
Toshiba Semiconductor and Storage
HN1C03FU-A(TE85L,F
Toshiba Semiconductor and Storage
HN1B01FU-Y(L,F,T)
Toshiba Semiconductor and Storage
HN1B04FU-Y(T5L,F,T
Toshiba Semiconductor and Storage
HN1C01FU-Y(T5L,F,T
Toshiba Semiconductor and Storage
HN4A56JU(TE85L,F)
Toshiba Semiconductor and Storage
ULN2003APG,CN
Toshiba Semiconductor and Storage
XC3S1200E-4FGG320C
Xilinx Inc.
XC3S5000-4FGG676I
Xilinx Inc.
XCV300E-6FG456C
Xilinx Inc.
A1020B-PL44C
Microsemi Corporation
XC2V2000-6FFG896C
Xilinx Inc.
XC7K325T-1FF900C
Xilinx Inc.
A42MX09-3TQ176I
Microsemi Corporation
LFE2M50SE-5FN900C
Lattice Semiconductor Corporation
10AX066K3F35E2SG
Intel
EP1C12Q240I7N
Intel