casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / EMB51T2R
codice articolo del costruttore | EMB51T2R |
---|---|
Numero di parte futuro | FT-EMB51T2R |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
EMB51T2R Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 30mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 5mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | 250MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-563, SOT-666 |
Pacchetto dispositivo fornitore | EMT6 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMB51T2R Peso | Contattaci |
Numero parte di ricambio | EMB51T2R-FT |
RN4901,LF(CT
Toshiba Semiconductor and Storage
RN4905,LF(CT
Toshiba Semiconductor and Storage
RN4907,LF
Toshiba Semiconductor and Storage
RN4983,LF(CT
Toshiba Semiconductor and Storage
RN4984,LF(CT
Toshiba Semiconductor and Storage
RN4987,LF(CT
Toshiba Semiconductor and Storage
RN1901,LF(CT
Toshiba Semiconductor and Storage
RN1903,LF(CT
Toshiba Semiconductor and Storage
RN1910,LF(CT
Toshiba Semiconductor and Storage
RN4985,LF(CT
Toshiba Semiconductor and Storage
EP1K10TC144-3N
Intel
A42MX36-CQ208B
Microsemi Corporation
A3PE600-1FGG484I
Microsemi Corporation
AT40K20LV-3EQC
Microchip Technology
5SGXMA7K3F35C2LN
Intel
5SGXMA4H2F35C3N
Intel
LCMXO2-2000HC-6FTG256C
Lattice Semiconductor Corporation
LCMXO2-4000HE-5FTG256I
Lattice Semiconductor Corporation
EP2AGX260FF35I5G
Intel
EP2A70F1508C8
Intel