casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / DTD513ZMGT2L

| codice articolo del costruttore | DTD513ZMGT2L |
|---|---|
| Numero di parte futuro | FT-DTD513ZMGT2L |
| SPQ / MOQ | Contattaci |
| Materiale di imballaggio | Reel/Tray/Tube/Others |
| serie | - |
| DTD513ZMGT2L Stato (ciclo di vita) | Disponibile |
| Stato parte | Active |
| Transistor Type | NPN - Pre-Biased |
| Corrente - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA |
| Corrente - Limite del collettore (max) | 500nA |
| Frequenza - Transizione | 260MHz |
| Potenza - Max | 150mW |
| Tipo di montaggio | Surface Mount |
| Pacchetto / caso | SOT-723 |
| Pacchetto dispositivo fornitore | VMT3 |
| Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
| DTD513ZMGT2L Peso | Contattaci |
| Numero parte di ricambio | DTD513ZMGT2L-FT |

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