casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / DTC043EMT2L
codice articolo del costruttore | DTC043EMT2L |
---|---|
Numero di parte futuro | FT-DTC043EMT2L |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
DTC043EMT2L Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | NPN - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 5mA |
Corrente - Limite del collettore (max) | - |
Frequenza - Transizione | 250MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-723 |
Pacchetto dispositivo fornitore | VMT3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTC043EMT2L Peso | Contattaci |
Numero parte di ricambio | DTC043EMT2L-FT |
RN1106ACT(TPL3)
Toshiba Semiconductor and Storage
RN1106CT(TPL3)
Toshiba Semiconductor and Storage
RN1107ACT(TPL3)
Toshiba Semiconductor and Storage
RN1107CT(TPL3)
Toshiba Semiconductor and Storage
RN1108ACT(TPL3)
Toshiba Semiconductor and Storage
RN1108CT(TPL3)
Toshiba Semiconductor and Storage
RN1109ACT(TPL3)
Toshiba Semiconductor and Storage
RN1109CT(TPL3)
Toshiba Semiconductor and Storage
RN1110ACT(TPL3)
Toshiba Semiconductor and Storage
RN1110CT(TPL3)
Toshiba Semiconductor and Storage
A3P015-2QNG68
Microsemi Corporation
XA2S100E-6TQ144Q
Xilinx Inc.
LCMXO640C-3TN144C
Lattice Semiconductor Corporation
A3P125-2TQG144I
Microsemi Corporation
M1A3P250-2VQ100
Microsemi Corporation
EP2C35U484I8N
Intel
XCS10-4PC84C
Xilinx Inc.
XA7A15T-2CSG324I
Xilinx Inc.
LFXP3E-3Q208C
Lattice Semiconductor Corporation
EP1S10F780C6
Intel