casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / DTB114ECHZGT116
codice articolo del costruttore | DTB114ECHZGT116 |
---|---|
Numero di parte futuro | FT-DTB114ECHZGT116 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | Automotive, AEC-Q101 |
DTB114ECHZGT116 Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP - Pre-Biased + Diode |
Corrente - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | - |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Corrente - Limite del collettore (max) | - |
Frequenza - Transizione | 200MHz |
Potenza - Max | 200mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | TO-236-3, SC-59, SOT-23-3 |
Pacchetto dispositivo fornitore | SST3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTB114ECHZGT116 Peso | Contattaci |
Numero parte di ricambio | DTB114ECHZGT116-FT |
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