casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / DTA143TMFHAT2L
codice articolo del costruttore | DTA143TMFHAT2L |
---|---|
Numero di parte futuro | FT-DTA143TMFHAT2L |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | Automotive, AEC-Q101 |
DTA143TMFHAT2L Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Corrente - Limite del collettore (max) | 500nA (ICBO) |
Frequenza - Transizione | 250MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-723 |
Pacchetto dispositivo fornitore | VMT3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTA143TMFHAT2L Peso | Contattaci |
Numero parte di ricambio | DTA143TMFHAT2L-FT |
RN2308(TE85L,F)
Toshiba Semiconductor and Storage
RN2309(TE85L,F)
Toshiba Semiconductor and Storage
RN2311(TE85L,F)
Toshiba Semiconductor and Storage
RN2313(TE85L,F)
Toshiba Semiconductor and Storage
RN2103ACT(TPL3)
Toshiba Semiconductor and Storage
RN2105ACT(TPL3)
Toshiba Semiconductor and Storage
RN2106ACT(TPL3)
Toshiba Semiconductor and Storage
RN2110ACT(TPL3)
Toshiba Semiconductor and Storage
RN2111ACT(TPL3)
Toshiba Semiconductor and Storage
RN2112ACT(TPL3)
Toshiba Semiconductor and Storage
M1A3P400-FGG484I
Microsemi Corporation
MPF300TL-FCVG484E
Microsemi Corporation
A54SX16P-1VQ100I
Microsemi Corporation
5SGXEB5R1F40C2L
Intel
XC7VX330T-3FFG1157E
Xilinx Inc.
A42MX24-PQ160
Microsemi Corporation
LCMXO2-2000HE-6FTG256C
Lattice Semiconductor Corporation
LFE3-150EA-6FN672C
Lattice Semiconductor Corporation
EP20K200RC240-1X
Intel
5SGXMA3H2F35C3N
Intel