casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / DRA9A14Y0L
codice articolo del costruttore | DRA9A14Y0L |
---|---|
Numero di parte futuro | FT-DRA9A14Y0L |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
DRA9A14Y0L Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 125mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SC-89, SOT-490 |
Pacchetto dispositivo fornitore | SSMini3-F3-B |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
DRA9A14Y0L Peso | Contattaci |
Numero parte di ricambio | DRA9A14Y0L-FT |
DTA123JKAT146
Rohm Semiconductor
DTA123YKAT146
Rohm Semiconductor
DTA124EKAT146
Rohm Semiconductor
DTA124XKAT146
Rohm Semiconductor
DTA143ZKAT146
Rohm Semiconductor
DTB114GKT146
Rohm Semiconductor
DTB143EKT146
Rohm Semiconductor
DTC114GKAT146
Rohm Semiconductor
DTC114WKAT146
Rohm Semiconductor
DTC123TKAT146
Rohm Semiconductor
AGLN030V5-ZQNG68
Microsemi Corporation
LFXP3C-3T144I
Lattice Semiconductor Corporation
XC6SLX100-N3FG484I
Xilinx Inc.
A54SX72A-FFG484
Microsemi Corporation
A54SX72A-1PQG208I
Microsemi Corporation
LCMXO2-256ZE-1SG32C
Lattice Semiconductor Corporation
10M50DAF484C8G
Intel
LFEC10E-3F484C
Lattice Semiconductor Corporation
LFE2-20E-6FN484C
Lattice Semiconductor Corporation
10AX066H2F34E2LG
Intel