casa / prodotti / Prodotti semiconduttori discreti / Diodi - Zener - Single / BZX84B75-HE3-08
codice articolo del costruttore | BZX84B75-HE3-08 |
---|---|
Numero di parte futuro | FT-BZX84B75-HE3-08 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | Automotive, AEC-Q101 |
BZX84B75-HE3-08 Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Voltage - Zener (Nom) (Vz) | 75V |
Tolleranza | ±2% |
Potenza - Max | 300mW |
Impedenza (Max) (Zzt) | 255 Ohms |
Corrente - Perdita inversa @ Vr | 50nA @ 52.5V |
Voltage - Forward (Vf) (Max) @ If | - |
temperatura di esercizio | -55°C ~ 150°C |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | TO-236-3, SC-59, SOT-23-3 |
Pacchetto dispositivo fornitore | SOT-23-3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZX84B75-HE3-08 Peso | Contattaci |
Numero parte di ricambio | BZX84B75-HE3-08-FT |
BZX84B39-E3-08
Vishay Semiconductor Diodes Division
BZX84B39-E3-18
Vishay Semiconductor Diodes Division
BZX84B39-G3-08
Vishay Semiconductor Diodes Division
BZX84B39-G3-18
Vishay Semiconductor Diodes Division
BZX84B39-HE3-08
Vishay Semiconductor Diodes Division
BZX84B39-HE3-18
Vishay Semiconductor Diodes Division
BZX84B3V0-E3-08
Vishay Semiconductor Diodes Division
BZX84B3V0-E3-18
Vishay Semiconductor Diodes Division
BZX84B3V0-G3-08
Vishay Semiconductor Diodes Division
BZX84B3V0-G3-18
Vishay Semiconductor Diodes Division
LCMXO1200E-3T144C
Lattice Semiconductor Corporation
XC3S1400A-4FGG484C
Xilinx Inc.
A3P1000-1FG256M
Microsemi Corporation
5SGXEA7K1F35C1N
Intel
XC7VX485T-2FFG1761C
Xilinx Inc.
XC6VLX130T-2FF1156I
Xilinx Inc.
XC7S25-L1CSGA324I
Xilinx Inc.
LCMXO640E-4MN100I
Lattice Semiconductor Corporation
LCMXO2-7000HE-6BG332C
Lattice Semiconductor Corporation
LCMXO2-4000HE-5FTG256C
Lattice Semiconductor Corporation