casa / prodotti / Prodotti semiconduttori discreti / Diodi - Zener - Single / BZX384C27-HE3-08
codice articolo del costruttore | BZX384C27-HE3-08 |
---|---|
Numero di parte futuro | FT-BZX384C27-HE3-08 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
BZX384C27-HE3-08 Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Voltage - Zener (Nom) (Vz) | 27V |
Tolleranza | ±5% |
Potenza - Max | 200mW |
Impedenza (Max) (Zzt) | 80 Ohms |
Corrente - Perdita inversa @ Vr | 50nA @ 18.9V |
Voltage - Forward (Vf) (Max) @ If | - |
temperatura di esercizio | -55°C ~ 150°C |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SC-76, SOD-323 |
Pacchetto dispositivo fornitore | SOD-323 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZX384C27-HE3-08 Peso | Contattaci |
Numero parte di ricambio | BZX384C27-HE3-08-FT |
BZX384B5V1-HE3-08
Vishay Semiconductor Diodes Division
BZX384B5V1-HE3-18
Vishay Semiconductor Diodes Division
BZX384B5V6-E3-08
Vishay Semiconductor Diodes Division
BZX384B5V6-G3-08
Vishay Semiconductor Diodes Division
BZX384B5V6-G3-18
Vishay Semiconductor Diodes Division
BZX384B5V6-HE3-08
Vishay Semiconductor Diodes Division
BZX384B5V6-HE3-18
Vishay Semiconductor Diodes Division
BZX384B62-E3-08
Vishay Semiconductor Diodes Division
BZX384B62-E3-18
Vishay Semiconductor Diodes Division
BZX384B62-G3-08
Vishay Semiconductor Diodes Division
XC2V8000-5FFG1517I
Xilinx Inc.
XC3S200A-5VQ100C
Xilinx Inc.
M1A3P1000-1FGG484
Microsemi Corporation
M2GL010-1FG484I
Microsemi Corporation
A3P030-VQG100I
Microsemi Corporation
AT40K05LV-3DQI
Microchip Technology
EPF10K50SFC256-2
Intel
5SGXEA7K3F40I3
Intel
LFE2M70E-6F900C
Lattice Semiconductor Corporation
10AX090N4F45E3SG
Intel