casa / prodotti / Prodotti semiconduttori discreti / Diodi - Zener - Single / BZX384B47-HE3-08
codice articolo del costruttore | BZX384B47-HE3-08 |
---|---|
Numero di parte futuro | FT-BZX384B47-HE3-08 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
BZX384B47-HE3-08 Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Voltage - Zener (Nom) (Vz) | 47V |
Tolleranza | ±2% |
Potenza - Max | 200mW |
Impedenza (Max) (Zzt) | 170 Ohms |
Corrente - Perdita inversa @ Vr | 50nA @ 32.9V |
Voltage - Forward (Vf) (Max) @ If | - |
temperatura di esercizio | -55°C ~ 150°C |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SC-76, SOD-323 |
Pacchetto dispositivo fornitore | SOD-323 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZX384B47-HE3-08 Peso | Contattaci |
Numero parte di ricambio | BZX384B47-HE3-08-FT |
BZX384B13-G3-18
Vishay Semiconductor Diodes Division
BZX384B13-HE3-08
Vishay Semiconductor Diodes Division
BZX384B13-HE3-18
Vishay Semiconductor Diodes Division
BZX384B15-E3-08
Vishay Semiconductor Diodes Division
BZX384B15-E3-18
Vishay Semiconductor Diodes Division
BZX384B15-G3-08
Vishay Semiconductor Diodes Division
BZX384B15-G3-18
Vishay Semiconductor Diodes Division
BZX384B15-HE3-08
Vishay Semiconductor Diodes Division
BZX384B15-HE3-18
Vishay Semiconductor Diodes Division
BZX384B16-E3-08
Vishay Semiconductor Diodes Division
LCMXO1200E-3TN144I
Lattice Semiconductor Corporation
A54SX08A-2TQ144
Microsemi Corporation
XC4013E-2BG225C
Xilinx Inc.
A3P1000-FGG256I
Microsemi Corporation
ICE40UL1K-SWG16ITR50
Lattice Semiconductor Corporation
EP1K50FC484-3
Intel
5AGXMA7D4F27C4N
Intel
5SGSED8N1F45C2N
Intel
EP4S40G5H40I3N
Intel
XC5VSX35T-1FFG665C
Xilinx Inc.