casa / prodotti / Prodotti semiconduttori discreti / Diodi - Zener - Single / BZT52C5V6-G3-18
codice articolo del costruttore | BZT52C5V6-G3-18 |
---|---|
Numero di parte futuro | FT-BZT52C5V6-G3-18 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | Automotive, AEC-Q101 |
BZT52C5V6-G3-18 Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Voltage - Zener (Nom) (Vz) | 5.6V |
Tolleranza | ±5% |
Potenza - Max | 410mW |
Impedenza (Max) (Zzt) | 10 Ohms |
Corrente - Perdita inversa @ Vr | 100nA @ 1V |
Voltage - Forward (Vf) (Max) @ If | - |
temperatura di esercizio | -55°C ~ 150°C |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOD-123 |
Pacchetto dispositivo fornitore | SOD-123 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZT52C5V6-G3-18 Peso | Contattaci |
Numero parte di ricambio | BZT52C5V6-G3-18-FT |
BZT52C22-G3-08
Vishay Semiconductor Diodes Division
BZT52C22-G3-18
Vishay Semiconductor Diodes Division
BZT52C22-HE3-08
Vishay Semiconductor Diodes Division
BZT52C22-HE3-18
Vishay Semiconductor Diodes Division
BZT52C24-E3-18
Vishay Semiconductor Diodes Division
BZT52C24-G3-08
Vishay Semiconductor Diodes Division
BZT52C24-G3-18
Vishay Semiconductor Diodes Division
BZT52C24-HE3-08
Vishay Semiconductor Diodes Division
BZT52C24-HE3-18
Vishay Semiconductor Diodes Division
BZT52C27-E3-18
Vishay Semiconductor Diodes Division
XCKU060-3FFVA1517E
Xilinx Inc.
XC6SLX45-3FGG484I
Xilinx Inc.
A3P400-2FGG484
Microsemi Corporation
MPF300T-FCVG484E
Microsemi Corporation
LCMXO2-4000ZE-3QN84C
Lattice Semiconductor Corporation
5SGSMD5K2F40C2LN
Intel
5SGXMB9R3H43C3N
Intel
A40MX02-1PQG100
Microsemi Corporation
LFE5U-25F-6BG256I
Lattice Semiconductor Corporation
EP2AGX95EF29I3N
Intel