casa / prodotti / Prodotti semiconduttori discreti / Diodi - Zener - Single / BZT52C12S RRG
codice articolo del costruttore | BZT52C12S RRG |
---|---|
Numero di parte futuro | FT-BZT52C12S RRG |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
BZT52C12S RRG Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Voltage - Zener (Nom) (Vz) | 12V |
Tolleranza | ±5% |
Potenza - Max | 200mW |
Impedenza (Max) (Zzt) | 25 Ohms |
Corrente - Perdita inversa @ Vr | 90nA @ 8V |
Voltage - Forward (Vf) (Max) @ If | 1V @ 10mA |
temperatura di esercizio | -55°C ~ 175°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SC-90, SOD-323F |
Pacchetto dispositivo fornitore | SOD-323F |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZT52C12S RRG Peso | Contattaci |
Numero parte di ricambio | BZT52C12S RRG-FT |
BZX584B7V5 RKG
Taiwan Semiconductor Corporation
BZX584B8V2 RKG
Taiwan Semiconductor Corporation
BZX584B9V1 RKG
Taiwan Semiconductor Corporation
BZX585B10 RKG
Taiwan Semiconductor Corporation
BZX585B11 RKG
Taiwan Semiconductor Corporation
BZX585B12 RKG
Taiwan Semiconductor Corporation
BZX585B13 RKG
Taiwan Semiconductor Corporation
BZX585B15 RKG
Taiwan Semiconductor Corporation
BZX585B16 RKG
Taiwan Semiconductor Corporation
BZX585B18 RKG
Taiwan Semiconductor Corporation
XA3S50-4PQG208Q
Xilinx Inc.
AGLN030V2-ZVQG100I
Microsemi Corporation
LFE2M35E-5FN256C
Lattice Semiconductor Corporation
LCMXO2280E-4FTN324I
Lattice Semiconductor Corporation
LCMXO640E-3BN256C
Lattice Semiconductor Corporation
10AX090N3F40I2SG
Intel
EP2S130F1508C5N
Intel
EP4SGX70DF29C4N
Intel
EP1S25F780C7N
Intel
EP20K60EQC208-1X
Intel