casa / prodotti / Prodotti semiconduttori discreti / Diodi - Zener - Single / BZG05C62-HE3-TR3
codice articolo del costruttore | BZG05C62-HE3-TR3 |
---|---|
Numero di parte futuro | FT-BZG05C62-HE3-TR3 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | Automotive, AEC-Q101 |
BZG05C62-HE3-TR3 Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Voltage - Zener (Nom) (Vz) | 62V |
Tolleranza | ±5% |
Potenza - Max | 1.25W |
Impedenza (Max) (Zzt) | 125 Ohms |
Corrente - Perdita inversa @ Vr | 500nA @ 47V |
Voltage - Forward (Vf) (Max) @ If | 1.2V @ 200mA |
temperatura di esercizio | 150°C |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | DO-214AC, SMA |
Pacchetto dispositivo fornitore | DO-214AC |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZG05C62-HE3-TR3 Peso | Contattaci |
Numero parte di ricambio | BZG05C62-HE3-TR3-FT |
BZG05C27-E3-TR
Vishay Semiconductor Diodes Division
BZG05C27-E3-TR3
Vishay Semiconductor Diodes Division
BZG05C27-HE3-TR
Vishay Semiconductor Diodes Division
BZG05C27-HE3-TR3
Vishay Semiconductor Diodes Division
BZG05C27TR
Vishay Semiconductor Diodes Division
BZG05C27TR3
Vishay Semiconductor Diodes Division
BZG05C30-E3-TR
Vishay Semiconductor Diodes Division
BZG05C30-E3-TR3
Vishay Semiconductor Diodes Division
BZG05C30-HE3-TR
Vishay Semiconductor Diodes Division
BZG05C30-HE3-TR3
Vishay Semiconductor Diodes Division
LCMXO1200E-5TN144C
Lattice Semiconductor Corporation
A54SX32A-FTQ144
Microsemi Corporation
XC2S100E-6PQ208C
Xilinx Inc.
LCMXO2-1200HC-5SG32I
Lattice Semiconductor Corporation
A54SX16P-1VQG100M
Microsemi Corporation
10CL025YU256C6G
Intel
5SGXEA9N2F45C2LN
Intel
XC4013E-4HQ208I
Xilinx Inc.
A42MX16-PQ160M
Microsemi Corporation
LFXP2-17E-6FN484C
Lattice Semiconductor Corporation