casa / prodotti / Prodotti semiconduttori discreti / Diodi - Zener - Single / BZD27C9V1P-M3-08
codice articolo del costruttore | BZD27C9V1P-M3-08 |
---|---|
Numero di parte futuro | FT-BZD27C9V1P-M3-08 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | Automotive, AEC-Q101, BZD27C-M |
BZD27C9V1P-M3-08 Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Voltage - Zener (Nom) (Vz) | 9.1V |
Tolleranza | - |
Potenza - Max | 800mW |
Impedenza (Max) (Zzt) | 4 Ohms |
Corrente - Perdita inversa @ Vr | 10µA @ 5V |
Voltage - Forward (Vf) (Max) @ If | 1.2V @ 200mA |
temperatura di esercizio | -65°C ~ 175°C |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | DO-219AB |
Pacchetto dispositivo fornitore | DO-219AB (SMF) |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27C9V1P-M3-08 Peso | Contattaci |
Numero parte di ricambio | BZD27C9V1P-M3-08-FT |
BZD27C3V6P-E3-08
Vishay Semiconductor Diodes Division
BZD27C3V6P-E3-18
Vishay Semiconductor Diodes Division
BZD27C3V6P-HE3-08
Vishay Semiconductor Diodes Division
BZD27C3V6P-HE3-18
Vishay Semiconductor Diodes Division
BZD27C3V6P-M3-08
Vishay Semiconductor Diodes Division
BZD27C3V6P-M3-18
Vishay Semiconductor Diodes Division
BZD27C3V9P-E3-08
Vishay Semiconductor Diodes Division
BZD27C3V9P-E3-18
Vishay Semiconductor Diodes Division
BZD27C3V9P-HE3-08
Vishay Semiconductor Diodes Division
BZD27C3V9P-HE3-18
Vishay Semiconductor Diodes Division
XCKU060-3FFVA1517E
Xilinx Inc.
XC6SLX45-3FGG484I
Xilinx Inc.
A3P400-2FGG484
Microsemi Corporation
MPF300T-FCVG484E
Microsemi Corporation
LCMXO2-4000ZE-3QN84C
Lattice Semiconductor Corporation
5SGSMD5K2F40C2LN
Intel
5SGXMB9R3H43C3N
Intel
A40MX02-1PQG100
Microsemi Corporation
LFE5U-25F-6BG256I
Lattice Semiconductor Corporation
EP2AGX95EF29I3N
Intel