casa / prodotti / Prodotti semiconduttori discreti / Diodi - Zener - Single / BZD27C82P R3G
codice articolo del costruttore | BZD27C82P R3G |
---|---|
Numero di parte futuro | FT-BZD27C82P R3G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
BZD27C82P R3G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Voltage - Zener (Nom) (Vz) | 82V |
Tolleranza | ±6.09% |
Potenza - Max | 1W |
Impedenza (Max) (Zzt) | 200 Ohms |
Corrente - Perdita inversa @ Vr | 1µA @ 62V |
Voltage - Forward (Vf) (Max) @ If | 1.2V @ 200mA |
temperatura di esercizio | -55°C ~ 175°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | DO-219AB |
Pacchetto dispositivo fornitore | Sub SMA |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27C82P R3G Peso | Contattaci |
Numero parte di ricambio | BZD27C82P R3G-FT |
BZD27C20P MHG
Taiwan Semiconductor Corporation
BZD27C20P MQG
Taiwan Semiconductor Corporation
BZD27C20P MTG
Taiwan Semiconductor Corporation
BZD27C20P R3G
Taiwan Semiconductor Corporation
BZD27C20P RFG
Taiwan Semiconductor Corporation
BZD27C20P RUG
Taiwan Semiconductor Corporation
BZD27C20PHM2G
Taiwan Semiconductor Corporation
BZD27C20PHMHG
Taiwan Semiconductor Corporation
BZD27C20PHMQG
Taiwan Semiconductor Corporation
BZD27C20PHMTG
Taiwan Semiconductor Corporation
LCMXO2280C-3TN100I
Lattice Semiconductor Corporation
XCV600-6FG676C
Xilinx Inc.
M1A3PE3000L-FGG484
Microsemi Corporation
A3P1000-PQ208
Microsemi Corporation
ICE40UL1K-SWG16ITR50
Lattice Semiconductor Corporation
A42MX09-VQG100I
Microsemi Corporation
AGL030V2-VQG100
Microsemi Corporation
EP4CE30F23C7
Intel
EP4SGX290KF43C2N
Intel
A54SX16A-1TQ100M
Microsemi Corporation