casa / prodotti / Prodotti semiconduttori discreti / Diodi - Zener - Single / BZD27C30P M2G
codice articolo del costruttore | BZD27C30P M2G |
---|---|
Numero di parte futuro | FT-BZD27C30P M2G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
BZD27C30P M2G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Voltage - Zener (Nom) (Vz) | 30V |
Tolleranza | ±6.66% |
Potenza - Max | 1W |
Impedenza (Max) (Zzt) | 15 Ohms |
Corrente - Perdita inversa @ Vr | 1µA @ 22V |
Voltage - Forward (Vf) (Max) @ If | 1.2V @ 200mA |
temperatura di esercizio | -55°C ~ 175°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | DO-219AB |
Pacchetto dispositivo fornitore | Sub SMA |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27C30P M2G Peso | Contattaci |
Numero parte di ricambio | BZD27C30P M2G-FT |
BZD27C180P RHG
Taiwan Semiconductor Corporation
BZD27C180P RTG
Taiwan Semiconductor Corporation
BZD27C180P RUG
Taiwan Semiconductor Corporation
BZD27C180PHM2G
Taiwan Semiconductor Corporation
BZD27C180PHMHG
Taiwan Semiconductor Corporation
BZD27C180PHMQG
Taiwan Semiconductor Corporation
BZD27C180PHMTG
Taiwan Semiconductor Corporation
BZD27C180PHRFG
Taiwan Semiconductor Corporation
BZD27C180PHRHG
Taiwan Semiconductor Corporation
BZD27C180PHRTG
Taiwan Semiconductor Corporation
LCMXO2280C-3TN100I
Lattice Semiconductor Corporation
XCV600-6FG676C
Xilinx Inc.
M1A3PE3000L-FGG484
Microsemi Corporation
A3P1000-PQ208
Microsemi Corporation
ICE40UL1K-SWG16ITR50
Lattice Semiconductor Corporation
A42MX09-VQG100I
Microsemi Corporation
AGL030V2-VQG100
Microsemi Corporation
EP4CE30F23C7
Intel
EP4SGX290KF43C2N
Intel
A54SX16A-1TQ100M
Microsemi Corporation