casa / prodotti / Prodotti semiconduttori discreti / Diodi - Zener - Single / BZD27C180PHR3G
codice articolo del costruttore | BZD27C180PHR3G |
---|---|
Numero di parte futuro | FT-BZD27C180PHR3G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | Automotive, AEC-Q101 |
BZD27C180PHR3G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Voltage - Zener (Nom) (Vz) | 179.5V |
Tolleranza | ±6.4% |
Potenza - Max | 1W |
Impedenza (Max) (Zzt) | 450 Ohms |
Corrente - Perdita inversa @ Vr | 1µA @ 130V |
Voltage - Forward (Vf) (Max) @ If | 1.2V @ 200mA |
temperatura di esercizio | -55°C ~ 175°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | DO-219AB |
Pacchetto dispositivo fornitore | Sub SMA |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27C180PHR3G Peso | Contattaci |
Numero parte di ricambio | BZD27C180PHR3G-FT |
BZD27C9V1PHMTG
Taiwan Semiconductor Corporation
BZD27C9V1PHRFG
Taiwan Semiconductor Corporation
BZD27C9V1PHRHG
Taiwan Semiconductor Corporation
BZD27C9V1PHRTG
Taiwan Semiconductor Corporation
BZD27C9V1PHRUG
Taiwan Semiconductor Corporation
BZD27C9V1PHRVG
Taiwan Semiconductor Corporation
BZD17C100P R3G
Taiwan Semiconductor Corporation
BZD17C100P RVG
Taiwan Semiconductor Corporation
BZD17C11P R3G
Taiwan Semiconductor Corporation
BZD17C120P R3G
Taiwan Semiconductor Corporation
M1A3PE3000L-1FG484M
Microsemi Corporation
APA300-BG456
Microsemi Corporation
A3P600-1FGG256I
Microsemi Corporation
LCMXO3LF-4300C-5BG400I
Lattice Semiconductor Corporation
EP2C20AF256I8N
Intel
EPF6016AFC256-3
Intel
5SGXMA3E3H29C2LN
Intel
5SGXEABN2F45I2N
Intel
XC7A75T-2CSG324C
Xilinx Inc.
LCMXO3L-2100E-6MG121I
Lattice Semiconductor Corporation