casa / prodotti / Prodotti semiconduttori discreti / Diodi - Zener - Single / BZD27C120P RTG
codice articolo del costruttore | BZD27C120P RTG |
---|---|
Numero di parte futuro | FT-BZD27C120P RTG |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
BZD27C120P RTG Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Voltage - Zener (Nom) (Vz) | 120.5V |
Tolleranza | ±5.39% |
Potenza - Max | 1W |
Impedenza (Max) (Zzt) | 300 Ohms |
Corrente - Perdita inversa @ Vr | 1µA @ 91V |
Voltage - Forward (Vf) (Max) @ If | 1.2V @ 200mA |
temperatura di esercizio | -55°C ~ 175°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | DO-219AB |
Pacchetto dispositivo fornitore | Sub SMA |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27C120P RTG Peso | Contattaci |
Numero parte di ricambio | BZD27C120P RTG-FT |
BZD17C39P M2G
Taiwan Semiconductor Corporation
BZD17C39P MHG
Taiwan Semiconductor Corporation
BZD17C39P MQG
Taiwan Semiconductor Corporation
BZD17C39P MTG
Taiwan Semiconductor Corporation
BZD17C39P RFG
Taiwan Semiconductor Corporation
BZD17C39P RHG
Taiwan Semiconductor Corporation
BZD17C39P RTG
Taiwan Semiconductor Corporation
BZD17C39P RUG
Taiwan Semiconductor Corporation
BZD17C39P RVG
Taiwan Semiconductor Corporation
BZD17C43P M2G
Taiwan Semiconductor Corporation
XC3S400AN-4FT256C
Xilinx Inc.
EPF10K10ATC100-3
Intel
EP3SE50F484C4N
Intel
M1AGL600V5-CS281I
Microsemi Corporation
A40MX04-PQ100M
Microsemi Corporation
LFE2M100E-7F900C
Lattice Semiconductor Corporation
LCMXO640C-3B256I
Lattice Semiconductor Corporation
LFE3-70E-8FN672C
Lattice Semiconductor Corporation
10AX057K2F35I2SG
Intel
5AGXMB7G6F35C6N
Intel