casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single / BC857B/DG/B3,215
codice articolo del costruttore | BC857B/DG/B3,215 |
---|---|
Numero di parte futuro | FT-BC857B/DG/B3,215 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
BC857B/DG/B3,215 Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | PNP |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
Corrente - Limite del collettore (max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V |
Potenza - Max | 250mW |
Frequenza - Transizione | 100MHz |
temperatura di esercizio | 150°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | TO-236-3, SC-59, SOT-23-3 |
Pacchetto dispositivo fornitore | TO-236AB |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
BC857B/DG/B3,215 Peso | Contattaci |
Numero parte di ricambio | BC857B/DG/B3,215-FT |
2SC3665-Y,T2YNSF(J
Toshiba Semiconductor and Storage
2SC3668-O,T2CLAF(J
Toshiba Semiconductor and Storage
2SC3668-Y,F2PANF(J
Toshiba Semiconductor and Storage
2SC3668-Y,T2F(J
Toshiba Semiconductor and Storage
2SC3668-Y,T2F(M
Toshiba Semiconductor and Storage
2SC3668-Y,T2WNLF(J
Toshiba Semiconductor and Storage
2SC3669-Y(T2OMI,FM
Toshiba Semiconductor and Storage
2SC3669-Y,T2PASF(M
Toshiba Semiconductor and Storage
2SC3672-O(T2ASH,FM
Toshiba Semiconductor and Storage
2SC3975
Panasonic Electronic Components
LCMXO640C-4T100I
Lattice Semiconductor Corporation
XA3S100E-4CPG132I
Xilinx Inc.
XC4013XL-1PQ208I
Xilinx Inc.
A3PN060-VQ100I
Microsemi Corporation
5SGXMA7H3F35C2
Intel
XC2VP4-5FF672C
Xilinx Inc.
LFE2-6E-5FN256C
Lattice Semiconductor Corporation
LCMXO2-7000HC-5BG256C
Lattice Semiconductor Corporation
10AX115S4F45I3LG
Intel
5CGXBC9E6F35C7N
Intel