casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single / BC857B/DG/B3,215
codice articolo del costruttore | BC857B/DG/B3,215 |
---|---|
Numero di parte futuro | FT-BC857B/DG/B3,215 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
BC857B/DG/B3,215 Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | PNP |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
Corrente - Limite del collettore (max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V |
Potenza - Max | 250mW |
Frequenza - Transizione | 100MHz |
temperatura di esercizio | 150°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | TO-236-3, SC-59, SOT-23-3 |
Pacchetto dispositivo fornitore | TO-236AB |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
BC857B/DG/B3,215 Peso | Contattaci |
Numero parte di ricambio | BC857B/DG/B3,215-FT |
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