casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single / BC337-25 A1G
codice articolo del costruttore | BC337-25 A1G |
---|---|
Numero di parte futuro | FT-BC337-25 A1G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
BC337-25 A1G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | NPN |
Corrente - Collector (Ic) (Max) | 800mA |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 5V |
Potenza - Max | 625mW |
Frequenza - Transizione | 100MHz |
temperatura di esercizio | -55°C ~ 150°C (TJ) |
Tipo di montaggio | Through Hole |
Pacchetto / caso | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Pacchetto dispositivo fornitore | TO-92 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
BC337-25 A1G Peso | Contattaci |
Numero parte di ricambio | BC337-25 A1G-FT |
2SC2655-O,F(J
Toshiba Semiconductor and Storage
2SC2655-Y(6MBH1,AF
Toshiba Semiconductor and Storage
2SC2655-Y(HIT,F,M)
Toshiba Semiconductor and Storage
2SC2655-Y(T6CANOFM
Toshiba Semiconductor and Storage
2SC2655-Y(T6CN,A,F
Toshiba Semiconductor and Storage
2SC2655-Y(T6ND1,AF
Toshiba Semiconductor and Storage
2SC2655-Y(T6ND2,AF
Toshiba Semiconductor and Storage
2SC2655-Y(T6ND3,AF
Toshiba Semiconductor and Storage
2SC2655-Y(T6OMI,FM
Toshiba Semiconductor and Storage
2SC2655-Y(T6STL,FM
Toshiba Semiconductor and Storage
LCMXO2-7000ZE-3TG144I
Lattice Semiconductor Corporation
XC3S400-4FG320I
Xilinx Inc.
XC6SLX9-3FTG256C
Xilinx Inc.
XCV300-5FG456C
Xilinx Inc.
LFE2-12E-5Q208C
Lattice Semiconductor Corporation
EP4CGX110CF23C7
Intel
EPF10K30AFC256-2N
Intel
EP20K60EFC144-3
Intel
ICE40LP1K-CM121
Lattice Semiconductor Corporation
EP1S80F1020I7
Intel