casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single / 2SC2235-Y,T6ASHF(J
codice articolo del costruttore | 2SC2235-Y,T6ASHF(J |
---|---|
Numero di parte futuro | FT-2SC2235-Y,T6ASHF(J |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
2SC2235-Y,T6ASHF(J Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | NPN |
Corrente - Collector (Ic) (Max) | 800mA |
Voltage - Collector Emitter Breakdown (Max) | 120V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 5V |
Potenza - Max | 900mW |
Frequenza - Transizione | 120MHz |
temperatura di esercizio | 150°C (TJ) |
Tipo di montaggio | Through Hole |
Pacchetto / caso | TO-226-3, TO-92-3 Long Body |
Pacchetto dispositivo fornitore | TO-92MOD |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SC2235-Y,T6ASHF(J Peso | Contattaci |
Numero parte di ricambio | 2SC2235-Y,T6ASHF(J-FT |
2SA1020-O,T6CSF(J
Toshiba Semiconductor and Storage
2SA1020-Y(6MBH1,AF
Toshiba Semiconductor and Storage
2SA1020-Y(F,M)
Toshiba Semiconductor and Storage
2SA1020-Y(HIT,F,M)
Toshiba Semiconductor and Storage
2SA1020-Y(ND1,AF)
Toshiba Semiconductor and Storage
2SA1020-Y(T6CANOAF
Toshiba Semiconductor and Storage
2SA1020-Y(T6CANOFM
Toshiba Semiconductor and Storage
2SA1020-Y(T6CN,A,F
Toshiba Semiconductor and Storage
2SA1020-Y(T6FJT,AF
Toshiba Semiconductor and Storage
2SA1020-Y(T6ND1,AF
Toshiba Semiconductor and Storage
AFS600-2FG256I
Microsemi Corporation
APA600-FG256I
Microsemi Corporation
5CEFA7M15I7N
Intel
XC2V2000-5BG575I
Xilinx Inc.
A42MX16-TQG176I
Microsemi Corporation
M1A3P1000-2FGG144
Microsemi Corporation
LFEC10E-3FN256I
Lattice Semiconductor Corporation
LCMXO640E-5M100C
Lattice Semiconductor Corporation
AT40K10LV-3AJI
Microchip Technology
EP2SGX30CF780C4
Intel