casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single / 2SB1216T-E
codice articolo del costruttore | 2SB1216T-E |
---|---|
Numero di parte futuro | FT-2SB1216T-E |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
2SB1216T-E Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | PNP |
Corrente - Collector (Ic) (Max) | 4A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
Corrente - Limite del collettore (max) | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 5V |
Potenza - Max | 1W |
Frequenza - Transizione | 130MHz |
temperatura di esercizio | 150°C (TJ) |
Tipo di montaggio | Through Hole |
Pacchetto / caso | TO-251-3 Short Leads, IPak, TO-251AA |
Pacchetto dispositivo fornitore | TP |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SB1216T-E Peso | Contattaci |
Numero parte di ricambio | 2SB1216T-E-FT |
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