casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single / 2SA1162S-Y,LF
codice articolo del costruttore | 2SA1162S-Y,LF |
---|---|
Numero di parte futuro | FT-2SA1162S-Y,LF |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
2SA1162S-Y,LF Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP |
Corrente - Collector (Ic) (Max) | 150mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2mA, 6V |
Potenza - Max | 150mW |
Frequenza - Transizione | 80MHz |
temperatura di esercizio | 125°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | TO-236-3, SC-59, SOT-23-3 |
Pacchetto dispositivo fornitore | S-Mini |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SA1162S-Y,LF Peso | Contattaci |
Numero parte di ricambio | 2SA1162S-Y,LF-FT |
2SC2229-Y(MIT1,F,M
Toshiba Semiconductor and Storage
2SC2229-Y(SAN2,F,M
Toshiba Semiconductor and Storage
2SC2229-Y(SHP,F,M)
Toshiba Semiconductor and Storage
2SC2229-Y(SHP1,F,M
Toshiba Semiconductor and Storage
2SC2229-Y(T6MIT1FM
Toshiba Semiconductor and Storage
2SC2229-Y(T6MITIFM
Toshiba Semiconductor and Storage
2SC2229-Y(T6ONK1FM
Toshiba Semiconductor and Storage
2SC2229-Y(T6SAN2FM
Toshiba Semiconductor and Storage
2SC2229-Y(TE6,F,M)
Toshiba Semiconductor and Storage
2SC2229-Y,F(J
Toshiba Semiconductor and Storage
A3P250-1PQ208
Microsemi Corporation
LCMXO3LF-2100C-6BG324I
Lattice Semiconductor Corporation
ICE40LM1K-SWG25TR1K
Lattice Semiconductor Corporation
A54SX08-VQ100I
Microsemi Corporation
EP1S10B672C7
Intel
EP4SGX360KF43C4
Intel
5SGXMA3K3F35C3N
Intel
XC2VP30-5FF1152C
Xilinx Inc.
ICE40LM2K-CM49TR1K
Lattice Semiconductor Corporation
10AX057K3F35E2SG
Intel